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Advanced Modeling of Silicon Germanium Heterojunction Bipolar Transistors James J These are: Inversion and Tomography 53 These are: Inversion and Tomography was the main justification of most of the researches presented and discussed A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias dependent substrate resistance as well as a proper partitioning of the substrate capacitance Highly accurate models for DCand small signal as well as for large signal characteristics are presented

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Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors James J These are: Inversion and Tomography 53

Name: Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors James J These are: Inversion and Tomography 53
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SKU: 77930588875
Price: 32.80 USD
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